ap3p010am t advanced power p-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss -30v simple drive requirement r ds(on) 10m fast switching characteristic i d -58a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w -55 to 150 drain current 3 , v gs @ 10v -14.8 pulsed drain current 1 -200 50 28.8 5 total power dissipation 201708291 1 -55 to 150 rating halogen-free product parameter drain-source voltage gate-source voltage drain current 3 , v gs @ 10v drain current, v gs @ 10v drain current, v gs @ 10v -30 + 20 -18.5 -58 -37 thermal data parameter total power dissipation operating junction temperature range storage temperature range a p3p010a series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the pmpak ? 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. s s s g pmpak ? 5 x 6 d d d d g d s .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-20a - - 10 m v gs =-4.5v, i d =-12a - - 15 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-12a - 38 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-12a - 34 54.4 nc q gs gate-source charge v ds =-15v - 10 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 12 - nc t d(on) turn-on delay time v ds =-15v - 11 - ns t r rise time i d =-1a - 9 - ns t d(off) turn-off delay time r g =3.3 - 150 - ns t f fall time v gs =-10v - 70 - ns c iss input capacitance v gs =0v - 3800 6080 pf c oss output capacitance v ds =-15v - 500 - pf c rss reverse transfer capacitance f=1.0mhz - 345 - pf r g gate resistance f=1.0mhz - 9 18 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-12a, v gs =0 v , - 24 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 4.starting t j =25 o c , v dd =-30v , l=0.1mh , r g =25 , v gs =-10v this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec 2 AP3P010AMT .
ap3p010am t fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+09 fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -6.0v -5.0v v g = -4.0v t c =25 o c 0 20 40 60 80 100 120 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 6 7 8 9 10 11 12 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -12 a t c =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -20a v g = -10v 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c i d = -250ua .
ap3p010am t fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance 2011082301 fig 11. transfer characteristics fig 12. drain current v.s. case temperature 4 0 2 4 6 8 10 0 20406080 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -12 a v ds = -15v 0 2000 4000 6000 8000 1 5 9 13 17 21 25 29 33 37 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms dc operation in this area limited by r ds(on) 0 20 40 60 80 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a) 0 20 40 60 80 0123456 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v t j = -55 o c .
ap3p010am t fig 13. normalized bv dss v.s. junction fig 14. total power dissipation temperature fig 15. typ. drain-source on state resistance 5 0 20 40 60 80 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d = -1ma 0 10 20 30 40 50 0 102030405060 -i d , drain current (a) r ds(on) (m ) t j =25 o c -4.5v v gs = -10v .
AP3P010AMT marking information 6 date code (ywwsss) y last digit of the year ww week sss sequence part numbe r 3p010a ywwsss .
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